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| JMnic Product Specification Silicon PNP Power Transistors 2SB1657 DESCRIPTION With TO-126 package Low collector saturation voltage High DC current gain APPLICATIONS For audio frequency amplifier and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current (DC) Ta=25ae PT Total power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 10 150 -55~150 ae ae Open emitter Open base Open collector CONDITIONS VALUE -30 -30 -6 -5 -8 -1 0.1 W UNIT V V V A A A JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-10mA ;IB=0 IC=-0.5A; IB=-25mA IC=-1A; IB=-50mA IC=-2A; IB=-100mA IC=-3A; IB=-75mA IC=-1A; IB=-50mA VCB=-30V; IE=0 VEB=-6V; IC=0 IC=-0.5A ; VCE=-2V IC=-3A ; VCE=-2V IC=-50mA ; VCE=-10V IE=0;f=1MHz ; VCB=-10V 150 70 75 60 MIN -30 2SB1657 SYMBOL V(BR)CEO VCEsat-1 VCEsat-2 VCEsat-3 VCEsat-4 VBEsat ICBO IEBO hFE-1 hFE-2 fT COB TYP. MAX UNIT V -0.15 -0.25 -0.40 -1.0 -1.5 -0.1 -0.1 600 |I |I V V V V V A A MHz pF 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1657 Fig.2 Outline dimensions 3 |
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